In a groundbreaking move, Samsung is ramping up its efforts to create a revolutionary new type of memory that combines the best features of RAM and SSDs. This innovative technology, known as Selector-Only Memory (SOM), promises to deliver both the speed of DRAM and the non-volatile storage capabilities of flash memory in a single package.
The Promise of SOM
SOM technology utilizes unique chalcogenide materials that serve a dual purpose, functioning as both the memory cell and the selector device. This design eliminates the need for separate components like transistors to activate each cell, as seen in traditional phase-change or resistive RAM. Instead, the chalcogenide material in SOM switches between conductive and resistive states to store data.
Leveraging Computer Modeling
To expedite the development process, Samsung researchers have turned to advanced computer modeling techniques. This approach allows them to sift through thousands of potential chalcogenide combinations without the time and cost constraints of physical experiments.
The team's simulations assessed various material properties, including:
- Bonding characteristics
- Thermal stability
- Electrical behavior
By analyzing these factors, researchers narrowed down the list of potential candidates from over 4,000 to just 18 prime contenders for fabrication and testing.
Key Performance Metrics
The computer models evaluated critical performance indicators such as:
- Threshold voltage drift
- The "memory window" separating on and off states over time
These simulations have enabled Samsung to establish clear screening criteria for identifying the most promising SOM material combinations.
Potential Market Impact
Samsung's computational approach to SOM development could give the company a significant edge in the race to bring this technology to market. The ability to spot high-performance outlier materials that might have been overlooked using traditional experimental methods alone could prove invaluable.
Last year, Samsung demonstrated its progress by presenting results on a 64Gb SOM chip with an impressive 16nm cell size at the International Electron Devices Meeting (IEDM).
Looking Ahead
As the development of SOM technology continues to accelerate, the potential for a new breed of memory that combines the best aspects of RAM and SSDs draws closer to reality. Samsung plans to present its latest findings at the upcoming IEDM in December, potentially bringing us one step closer to a revolution in computer memory technology.