Graphene Memory Breakthrough Achieves 25 Billion Operations Per Second
Scientists at Fudan University have developed PoX, a revolutionary graphene-based flash memory device that operates 100,000 times faster than current solutions. This breakthrough technology can perform 25 billion operations per second, potentially transforming AI computing and semiconductor development.
Chinese Scientists Achieve 10,000x Speed Breakthrough in Flash Memory Technology
Researchers at Fudan University have developed PoX, a revolutionary flash memory technology that operates 10,000 times faster than current solutions, writing data in just 400 picoseconds. This graphene-based innovation could transform AI systems and computing while advancing China's semiconductor capabilities.
SK hynix Leads Memory Race with World's First 48GB 16-Hi HBM3E
SK hynix unveils groundbreaking 48GB 16-Hi HBM3E memory, outpacing competitors in high-bandwidth solutions. The innovation promises significant performance gains for AI and high-performance computing, with samples expected by early 2025.
Samsung Pioneers Next-Gen Memory: Combining RAM and SSD in One
Samsung accelerates development of Selector-Only Memory (SOM), a revolutionary technology merging RAM speed with SSD storage. Advanced computer modeling narrows thousands of material combinations to 18 prime candidates for testing.